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? semiconductor components industries, llc, 2005 august, 2005 ? rev. 7 publication order number: MMUN2211LT1/d MMUN2211LT1 series preferred devices bias resistor transistor npn silicon surface mount transistor with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the sot-23 package which is designed for low power surface mount applications. features ? simplifies circuit design ? reduces board space and component count ? pb?free packages are available maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d 246 (note 1) 400 (note 2) 1.5 (note 1) 2.0 (note 2) mw c/w thermal resistance, junction-to-ambient r ja 508 (note 1) 311 (note 2) c/w thermal resistance, junction-to-lead r jl 174 (note 1) 208 (note 2) c/w junction and storage temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. fr?4 @ minimum pad 2. fr?4 @ 1.0 x 1.0 inch pad sot?23 case 318 style 6 marking diagram pin 3 collector (output) pin 2 emitter (ground) pin 1 base (input) r1 r2 preferred devices are recommended choices for future use and best overall value. http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. ordering information a8x m 1 a8x = specific device code m = date code = pb?free package (note: microdot may be in either location)
MMUN2211LT1 series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current MMUN2211LT1 (v eb = 6.0 v, i c = 0) mmun2212lt1 mmun2213lt1 mmun2214lt1 mmun2215lt1 mmun2216lt1 mmun2230lt1 mmun2231lt1 mmun2232lt1 mmun2233lt1 mmun2234lt1 mmun2238lt1 mmun2241lt1 i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 4.0 0.1 madc collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (note 3), (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics (note 3) dc current gain MMUN2211LT1 (v ce = 10 v, i c = 5.0 ma) mmun2212lt1 mmun2213lt1 mmun2214lt1 mmun2215lt1 mmun2216lt1 mmun2230lt1 mmun2231lt1 mmun2232lt1 mmun2233lt1 mmun2234lt1 mmun2238lt1 mmun2241lt1 h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 350 350 ? ? ? ? ? ? ? ? ? ? ? ? ? collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) (i c = 10 ma, i b = 5 ma) mmun2230lt1/mmun2231lt1 (i c = 10 ma, i b = 1 ma) mmun2215lt1/mmun2216lt1 mmun2232lt1/mmun2233lt1/mmun2234lt1/ mmun2238lt1 v ce(sat) ? ? 0.25 vdc 3. pulse test: pulse width < 300 s, duty cycle < 2.0%.
MMUN2211LT1 series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics (note 4) output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) MMUN2211LT1 mmun2212lt1 mmun2214lt1 mmun2215lt1 mmun2216lt1 mmun2230lt1 mmun2231lt1 mmun2232lt1 mmun2233lt1 mmun2234lt1 mmun2238lt1 (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) mmun2213lt1 (v cc = 5.0 v, v b = 5.0 v, r l = 1.0 k ) mmun2241lt1 v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) (v cc = 5.0 v, v b = 0.050 v, r l = 1.0 k ) mmun2230lt1 (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) mmun2215lt1 mmun2216lt1 mmun2233lt1 mmun2238lt1 v oh 4.9 ? ? vdc input resistor MMUN2211LT1 mmun2212lt1 mmun2213lt1 mmun2214lt1 mmun2215lt1 mmun2216lt1 mmun2230lt1 mmun2231lt1 mmun2232lt1 mmun2233lt1 mmun2234lt1 mmun2238lt1 mmun2241lt1 r1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.88 130 k resistor ratio MMUN2211LT1/mmun2212lt1/mmun2213lt1 mmun2214lt1 mmun2215lt1/mmun2216lt1/mmun2238lt1 mmun2241lt1 mmun2230lt1/mmun2231lt1/mmun2232lt1 mmun2233lt1 mmun2234lt1 r1/r2 0.8 0.17 ? ? 0.8 0.055 0.38 1.0 0.21 ? ? 1.0 0.1 0.47 1.2 0.25 ? ? 1.2 0.185 0.56 4. pulse test: pulse width < 300 s, duty cycle < 2.0%.
MMUN2211LT1 series http://onsemi.com 4 typical electrical characteristics MMUN2211LT1 100 10 1 0.1 0.01 0.001 0123 4 v in , input voltage (volts) 5678910 v o = 5 v i c, collector current (ma) t a = ?25 c 75 c 25 c 1000 100 10 1 10 100 i c , collector current (ma) 5 0 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) f = 1 mhz l e = 0 a t a = 25 c v ce = 10 v figure 1. derating curve 250 200 150 100 50 0 ?50 0 50 100 150 t a , ambient temperature (5 c) figure 2. v ce(sat) vs. i c p d, power dissipation (milliwatts) c ob, capacitance (pf) h fe, dc current gain (normalized) r ja = 625 c/w t a = 75 c ?25 c 25 c 10 02030 i c , collector current (ma) 10 1 0.1 40 5 0 figure 3. dc current gain v in, input voltage (v) t a = ?25 c 75 c 25 c v o = 0.2 v 1 0.1 0.01 0.001 02040608 0 i c , collector current (ma) i c /i b = 10 v ce(sat), maximum collector voltage (v) t a = ?25 c 75 c 25 c figure 4. output capcitance figure 5. output current vs. input voltage figure 6. input voltage vs. output current
MMUN2211LT1 series http://onsemi.com 5 typical electrical characteristics mmun2212lt1 figure 7. v ce(sat) vs. i c 0.001 0.01 0.1 1 40 i c , collector current (ma) 020 6080 i c /i b = 10 ? v ce(sat), maximum collector voltage (v) t a = ?25 c 25 c 75 c figure 8. dc current gain 1000 10 i c , collector current (ma ) 100 10 110 0 v ce = 10 v h fe, dc current gain (normalized) t a = 75 c 25 c ?25 c c ob, capacitance (pf) figure 9. output capacitance figure 10. output current vs. input voltage 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246810 0 i c , collector current (ma) 100 10 1 0.1 10 20 30 40 50 figure 11. input voltage vs. output current 50 010203040 4 3 2 1 0 v r , reverse bias voltage (volts) f = 1 mhz l e = 0 a t a = 25 c v o = 5 v v o = 0.2 v i c, collector current (ma) v in, input voltage (v) t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c
MMUN2211LT1 series http://onsemi.com 6 typical electrical characteristics mmun2213lt1 v ce(sat), maximum collector voltage (v) figure 12. v ce(sat) vs. i c 0 204060 80 10 1 0.1 0.01 i c , collector current (ma) i c /i b = 10 t a = ?25 c 75 c 25 c figure 13. dc current gain 1000 10 i c , collector current (ma) 100 10 110 0 v ce = 10 v h fe, dc current gain (normalized) t a = 75 c ?25 c 25 c figure 14. output capacitance 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) f = 1 mhz l e = 0 a t a = 25 c c ob, capacitance (pf) 024681 0 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) figure 15. output current vs. input voltage v o = 5 v i c, collector current (ma) t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c 100 10 1 0.1 010 203040 50 i c , collector current (ma) figure 16. input voltage vs. output current v o = 0.2 v v in, input voltage (v) 75 c t a = ?25 c 25 c
MMUN2211LT1 series http://onsemi.com 7 typical electrical characteristics mmun2214lt1 figure 17. v ce(sat) vs. i c i c , collector current (ma) 020406080 1 0.1 0.01 0.001 i c /i b = 10 t a = ?25 c 25 c 75 c v ce(sat), maximum collector voltage (v) figure 18. dc current gain 110 10 0 i c , collector current (ma) v ce = 10 300 250 200 150 100 50 0 2 4 6 8 15 20 40 50 60 70 80 90 h fe, dc current gain (normalized) 25 c t a = 75 c ?25 c 4 3.5 3 2.5 2 1.5 1 0.5 0 024681015 20 25 30 35 40 45 50 v r , reverse bias voltage (volts) figure 19. output capacitance f = 1 mhz l e = 0 a t a = 25 c i c, collector current (ma) c ob, capacitance (pf) 100 10 1 0246810 figure 20. output current vs. input voltage v in , input voltage (volts) v o = 5 v t a = ?25 c 75 c 25 c 10 1 0.1 01020304050 figure 21. input voltage vs. output current i c , collector current (ma) v o = 0.2 v v in, input voltage (v) t a = ?25 c 75 c 25 c
MMUN2211LT1 series http://onsemi.com 8 typical electrical characteristics mmun2232lt1 t a = 75 c i c /i b =10 12 1 0.1 0.001 16 8 420 i c , collector current (ma) v ce(sat), maximum collector voltage (v) 0.01 24 28 ?25 c 25 c figure 22. v ce(sat) vs. i c figure 23. dc current gain v ce = 10 v 0 1000 100 25 50 10 100 1 75 i c , collector current (ma) h fe, dc current gain t a = 75 c ?25 c 25 c 125 figure 24. output capacitance figure 25. output current vs. input voltage f = 1 mhz i e = 0 a t a = 25 c 0 100 10 246 1 0.1 0.01 8 0 4 3 20 2 1 0 v in, input voltage (volts) v r, reverse bias voltage (volts) i c , collector current (ma) c ob, capacitance (pf) 10 60 50 40 30 5 6 v o = 5 v 75 c t a = ?25 c 25 c figure 26. output voltage vs. input current v o = 0.2 v 0 10 10 20 30 1 0.1 i c, collector current (ma) v in, input voltage (v) t a = ?25 c 75 c 25 c
MMUN2211LT1 series http://onsemi.com 9 typical electrical characteristics mmun2233lt1 75 c t a = ?25 c figure 27. v ce(sat) vs. i c 25 c i c /i b = 10 12 1 0.1 0.001 17 7 222 i c , collector current (ma) v ce(sat), maximum collector voltage (v) 0.01 27 32 figure 28. dc current gain v ce = 10 v 1 1000 100 10 1 10 i c , collector current (ma) h fe, dc current gain t a = ?25 c 10 0 75 c 25 c figure 29. output capacitance f = 1 mhz i e = 0 a t a = 25 c 0 0.5 3 20 2 1 0 v r, reverse bias voltage (volts) c ob, capacitance (pf) 10 60 50 40 30 3.5 4 1.5 2.5 figure 30. output current vs. input voltage 0 100 10 2 8 1 0.1 0.01 46 v in, input voltage (volts) i c , collector current (ma) v o = 5 v t a = ?25 c 75 c 25 c figure 31. input voltage vs. output current v o = 0.2 v 0 10 12 18 30 1 0.1 i c, collector current (ma) t a = ?25 c 624 75 c 25 c v in, input voltage (v)
MMUN2211LT1 series http://onsemi.com 10 typical applications for npn brts load +12 v figure 32. level shifter: connects 12 or 24 volt circuits to logic in out v cc isolated load from p or other logic +12 v figure 33. open collector inverter: inverts the input signal figure 34. inexpensive, unregulated current source
MMUN2211LT1 series http://onsemi.com 11 ordering information device marking r1(k) r2(k) package shipping ? MMUN2211LT1 a8a 10 10 sot?23 3000 / tape & reel MMUN2211LT1g 10 10 sot?23 (pb?free) mmun2211lt3 10 10 sot?23 10,000 / tape & reel mmun2211lt3g 10 10 sot?23 (pb?free) mmun2112lt1 a8b 22 22 sot?23 3000 / tape & reel mmun2212lt1g 22 22 sot?23 (pb?free) mmun2213lt1 a8c 47 47 sot?23 mmun2213lt1g 47 47 sot?23 (pb?free) mmun2214lt1 a8d 10 47 sot?23 mmun2214lt1g 10 47 sot?23 (pb?free) mmun2215lt1 a8e 10 sot?23 mmun2215lt1g 10 sot?23 (pb?free) mmun2216lt1 a8f 4.7 sot?23 mmun2216lt1g 4.7 sot?23 (pb?free) mmun2230lt1 a8g 1.0 1.0 sot?23 mmun2230lt1g 1.0 1.0 sot?23 (pb?free) mmun2231lt1 a8h 2.2 2.2 sot?23 mmun2231lt1g 2.2 2.2 sot?23 (pb?free) mmun2232lt1 a8j 4.7 4.7 sot?23 mmun2232lt1g 4.7 4.7 sot?23 (pb?free) mmun2233lt1 a8k 4.7 47 sot?23 mmun2233lt1g 4.7 47 sot?23 (pb?free) mmun2234lt1 a8l 22 47 sot?23 mmun2234lt1g 22 47 sot?23 (pb?free) mmun2234lt3 22 47 sot?23 10,000 / tape & reel mmun2234lt3g 22 47 sot?23 (pb?free) mmun2238lt1 a8r 2.2 sot?23 3000 / tape & reel mmun2238lt1g 2.2 sot?23 (pb?free) mmun2241lt1 a8u 100 sot?23 mmun2241lt1g 100 sot?23 (pb?free) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
MMUN2211LT1 series http://onsemi.com 12 package dimensions sot?23 (to?236) case 318?08 issue al style 6: pin 1. base 2. emitter 3. collector mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* b c l d a e a1 e 3 1 2 dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.35 0.54 0.69 0.014 2.10 2.40 2.64 0.083 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318?01 thru ?07 and ?09 obsolete, new standard 318?08. h e 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.021 0.029 0.094 0.104 nom max h e on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MMUN2211LT1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.

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